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| SMD Type General Purpose Transistor 2SD2226K SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Low saturation voltage. 0.55 High emitter-base voltage. +0.1 1.3-0.1 High DC current gain. 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature * Single pulse Pw=100ms. Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 50 12 0.15 0.2 * 0.2 150 -55 to +150 W Unit V V V A Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage * DC current transfer ratio * Output capacitance * Transition frequency * Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=10iA IC=1mA IE=10iA VCB=50V VEB=12V Testconditons Min 60 50 12 0.3 0.3 0.3 820 250 3.5 2700 MHz pF Typ Max Unit V V V iA iA V VCE(sat) IC/IB=50mA/5mA hFE fT Cob VCE=5V, IC=1mA VCE=5V, IE= -10mA, f=100MHz VCB=5V, IE=0, f=1MHz hFE Classification Marking Rank hFE V 820 1800 BJ W 1200 2700 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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